Type Designator: NCEP60T20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 255 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 200 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 130 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 1900 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
Package: TO220
